SAMSUNG 990 EVO Plus Internal SSD, 4TB Capacity, PCIe Gen 4.0 x4 / 5.0 x2 NVMe 2.0 Interface, Up to 7,250 MB/s Read & 6,300 MB/s Write Support, V-NAND TLC | MZ-V9S4T0BW

990 EVO Plus
Specifications
Model Code (Capacity)
MZ-V9S4T0BW (4TB)
General Features
Application
Client PCs
Form Factor
M.2 (2280)
Interface
PCIe® Gen 4.0 x4 / 5.0 x2 NVMe™ 2.0
Dimension (WxHxD)
80.15 x 22.15 x 2.38mm
Weight
Max 9.0g
Storage Memory
Samsung V-NAND TLC
Controller
Samsung in-house Controller
Cache Memory
HMB (Host Memory Buffer)
Special Features
TRIM Support
Supported
S.M.A.R.T Support
Supported
GC (Garbage Collection)
Auto Garbage Collection Algorithm
Encryption Support
AES 256-bit Encryption (Class 0), TCG/Opal, IEEE1667 (Encrypted Drive)
WWN Support
Not Supported
Device Sleep Mode Support
Yes
Performance
Sequential Read
Up to 7,250 MB/s
Sequential Write
Up to 6,300 MB/s
Random Read (4KB, QD32)
Up to 1,050,000 IOPS
Random Write (4KB, QD32)
Up to 1,400,000 IOPS
Environment
Average Power Consumption
Read 5.5W / Write 4.8W
Power Consumption (Idle)
Typical 60mW for all capacities
Power Consumption (Sleep)
Typical 5mW for all capacities
Allowable Voltage
3.3V ± 5%
Reliability (MTBF)
1.5 Million Hours
Operating Temperature
0 – 70°C
Shock Resistance
1,500 G & 0.5 ms (Half sine)